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Home Peripherals & Modules Peripherals DRAM Memory Module SO-DDR3 Memory

SO-DDR3 Memory

Deliver stable memory technology with Advantech! We offers industrial grade SO-DDR3 1600 memory with 30μ" gold plating connector (204 pin) which is featuring its increased power efficiency and bandwidth. With rigorous reliability and vibration tests and -40 ~ 85°C (-40 ~ 185°F) wide operating temp. range, Our certified SODIMM DDR3 is fully suitable for enterprise, embedded, and ultra-thin mobile device like micro-server, notebook applications.
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Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip
AQD-SD3L2GN16-SQ1
Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

€22.65

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Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip
AQD-SD3L4GE16-SG
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip
  1. DDR3-1600 ECC SO-DIMM
  2. 204-Pin
  3. 512MX8
  4. 1.35V
  5. Samsung Original Chip

€29.13

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Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
AQD-SD3L4GN16-SG
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

€22.15

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Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
AQD-SD3L4GN16-SG1
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

€39.29

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Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
AQD-SD3L8GN16-SG1
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

€77.42

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